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1、 PAM1400/1000/600/300 SERVICE MANUAL RadioFans.CN SERVICE MANUAL PAM1400/1000/600/300 INDEX - BLOCK DIAGRAM - SCHEMATICS - COMPONENTS LOCATION SCHEMA - TESTING AND QUALITY CONTROL - TECHNICAL CHARACTERISTICS - WIRING DIAGRAM - MECHANICAL DIAGRAM - PACKING DIAGRAM RadioFans.CN RadioFans.CN 1 MODULE C
2、IRCUIT 11.0504B OPERATION - DESCRIPTION The control element is the operational NE5534. This is a very low noise operational, especially designed for very high quality applications in professional audio equipment, control equipment and telephony channel amplifiers. The operational is internally compe
3、nsated for a gain equal to or higher than three. Frequency response can be optimized with an external compensation capacity, for several applications (unity gain amplifier, capacitive load, slew-rate, low overshoot, etc.). Characteristics: Small-signal bandwidth: 10Mhz Output drive capability: 600 1
4、0V(rms) at Vs=18V Input noise voltage: 4nV/ % Hz DC voltage gain: 100000 AC voltage gain: 6000 at 10KHz Power bandwidth: 200KHz Slew-rate: 13V/s Supply voltage range: 3 to 20V POWER SUPPLY The BF871 and BF872 transistors are mounted in a common base configuration, in a current source structure. The
5、current sources have a double function: polarizing the gate-source links in the MOSFETs to the limit of the conduction and moving the voltage variations at the operational output which are refered to ground to voltage variations refered to high voltage power supply. The polarization point is calcula
6、ted so the voltage dropout in Rc (R112+R111) is the limit voltage of conduction of the MOSFETs (.2 to 3V), enough to carry the bias current. If we modulate in AC the base-emitter voltage, the Ic and VRc will vary proportionally. In our configuration, as the reference voltage Vref is constant (it is
7、a part of the operational power supply), we add the operational output voltage to the transistors emitter through Re (R107-R108). The Rc value fixes the source output impedance. We do not recommend to raise it higher than 1K because of frequency response and slew rate reasons. This voltage circuits
8、gain is, as usual in a common base configuration with Rc/Re emitter resistor, 0.45. RadioFans.CN 2 BIAS CURRENT ADJUST The bias current adjust is performed through the variable resistor connected between the emitters of the current sources R110 (5K). It delivers a supplementary current (it does not
9、go through the operational) which simultaneously increases the voltage which falls in the Rc load resistors. This is the easiest way of acting with just one adjust over both branches at the same time. In order to adjust the bias current the adjustable resistor must be varied until a current of about
10、 80mA circulates through each MOSFET. So, for instance, for a PAM1400 in which there are six MOSFETs it will be 80 x 6 = 480mA. The bias current depends on the MOSFETs temperature and the stabilizing circuit transistors temperature. TEMPERATURE STABILIZING CIRCUIT Temperature affects MOSFETs conduct
11、ion in two different ways: first, the conduction threshold voltage has a negative temperature coefficient; second, the drain-source conduction resistance increases with temperature. Depending on which of the two things is predominating the temperature coefficient of the drain can be positive or nega
12、tive. In our case, in which the gate-source voltage in the MOSFETs is very low when they conduct, the temperature coefficient of drain current -which is positive- is predominating. To avoid thermal runaway in the polarizing current we must decrease the gate-source voltage as the MOSFETs get hot. Tem
13、perature stabilization is performed by modifying the reference voltage of both sources. If the temperature increases the Vref must decrease so that Ic and VRc decrease and, as a consequence, the gate-source voltage also decreases. The circuit used is shown in figure 3. The base-emitter Vbe temperatu
14、re/voltage feature is used to obtain the final result we need. The main idea is adequately choosing R1 and R2 to obtain the right temperature coefficient. RadioFans.CN 3 SYMMETRY ADJUST The threshold voltage varies much, even between MOSFETs of the same kind. When connecting them in parallel we must
15、 be careful that they all have the same conduction current if we want equal currents circulating in all of them. If the conduction voltage of P an N channels MOSFETs is not the same they will conduct different currents, even when we apply identical gate-source voltages. As the bias current of the N
16、MOSFETs must be identical to the one of the P MOSFETs the feedback will correct the continuous voltage at the operational output to polarize the MOSFETs with different voltages until both conduct equal currents. If the operational output is not 0 V its capacity to give voltage and current is not the
17、 same in both senses. To avoid this we must put a symmetry adjust. It is just an adjust which allows to vary the collector resistance of one of the current sources (R111). The symmetry adjust does not correct the asymmetrical clipping saturation of the power amplifier with real load. This happens be
18、cause the conduction resistors (Ron) of the MOSFETs N and P are not equal. Channel P has a higher Ron than channel N. This characteristic depends on the MOSFETs physical construction. POWER MOSFETs The MOSFETs used are IRFP9240 (P) and IRFP240 (N). They are assembled in a common source configuration
19、 so they can be completely saturated. This kind of configuration has two drawbacks compared to a common drain one: less stability (because of the configuration gain itself) and high output impedance in open loop. The source resistances (0.22) are needed for the MOSFETs to work in parallel. E.g.: Two
20、 MOSFETs excited by the same Vgs voltage (gate-source voltage) of 5V. If they have different transconductance curves (Id function Vgs) they will conduct different drain currents; lets say 1A and 3A. The second one will dissipate more power and will get hotter. The use of source resistances tends to
21、match the current that each of the MOSFETs connected in parallel is conducting. RadioFans.CN 4 This resistance performs a negative feedback on the gate, lowering down the Vgs, relating to the drain current; like this: Vgs = Vgg - Id*Rs The higher the Id, the lower the Vgs voltage. The gate is protec
22、ted by a zener, preventing a possible overload during an unexpected change from overload to real clipping. Given the high input impedance and the broad frequency response of the MOSFETs there is a high risk of self-oscillations if all gates are excited connected to the same node. Intercalating seria
23、l resistances and ferrite beads at the gate this possibility is minimized, because the Q of the LC network made by the inductances and gate-source capacity is reduced. PROTECTION CIRCUIT The protection circuit monitors the dissipated power at the MOSFETs stage. It has two basic parts: MOSFET Id curr
24、ent detection. MOSFET Vds voltage detection. The goal is limiting the MOSFET so it works inside an area close to the SOA, as indicated in the figure. We chose channel N because, due to construction reasons, its SOA is lower. ZONE A. This zone is for very low loads, around 0. As the load voltage is v
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