HarmanKardon-AVR350_230-avr-sb维修电路原理图.pdf
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1、 harman/kardon Service Manual AVR 347/230 AVR 350/230 7 x 55W 7.1 CHANNEL A/V RECEIVERS CONTENTS THIS MANUAL CONTAINS SEMICONDUCTOR PINOUTS ONLY. Main Service Manual in separate file Released EU2008 harman/kardon, Inc. Rev 0, 07/2008 250 Crossways Park Dr. Woodbury, New York, 11797 harman/kardonAVR
2、347/230, AVR 350/230 Semiconductor PinoutsPage 1 of 51RadioFans.CN 收音机爱 好者资料库54hFERank O(5000to12000), P(6500to20000), Y(15000to30000)Darlington2SB1647ICVCE Characteristics (Typical)hFEIC Characteristics (Typical)hFEIC Temperature Characteristics (Typical)ICVBE Temperature Characteristics (Typical)V
3、CE(sat)IB Characteristics (Typical)PcTa Derating10mA50mA3mA03210.210.510520010050Base Current IB(mA)Collector-Emitter Saturation Voltage VCE(sat)(V)IC=10AIC=15AIC=5A0151050321Base-Emittor Voltage VBE(V)Collector Current IC(A)(VCE=4V)125C (Case Temp)25C (Case Temp)30C (Case Temp)0.20.51510 15Collecto
4、r Current IC(A)DC Current Gain hFE(VCE=4V)1,00010,00050,0005,000Typ(VCE=4V)0.210.5510 15100050001000050000Collector Current IC(A)DC Current Gain hFE25C30C125CTime t(ms)0.1130.511010010002000Transient Thermal Resistance j-a(C/W)0.020.10.050.515100402060Cut-off Frequency fT(MHZ)(VCE=12V)Emitter Curren
5、t IE(A)Safe Operating Area (Single Pulse)j-at CharacteristicsfTIE Characteristics (Typical)0051015264Collector-Emitter Voltage VCE(V)Collector Current IC(A)1.5mA1.0mA0.8mAIB=0.3mA0.5mA2mA130100503.50Ambient Temperature Ta(C)Maximum Power Dissipation PC(W)With Infinite heatsinkWithout Heatsink0255075
6、100125150Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)Application : Audio, Series Regulator and General PurposeSymbolVCBOVCEOVEBOICIBPCTjTstg2SB16471501505151130(Tc=25C)15055 to +150UnitVVVAAWCCIAbsolute maximum ratings IElectrical CharacteristicsSymbolICBOIEBOV(BR)CEOhFEVCE(s
7、at)VBE(sat)fTCOB2SB1647100max100max150min5000min2.5max3.0max45typ320typUnitAAVVVMHzpFConditionsVCB=150VVEB=5VIC=30mAVCE=4V, IC=10AIC=10A, IB=10mAIC=10A, IB=10mA VCE=12V, IE=2AVCB=10V, f=1MHz(Ta=25C)(Ta=25C)External Dimensions MT-100(TO3P)15.60.49.619.90.34.02.05.00.21.83.20.1231.05+0.2-0.120.0min4.0
8、maxBE5.450.15.450.1C4.80.20.65+0.2-0.11.42.00.1abITypical Switching Characteristics (Common Emitter)VCC(V)40RL() 4IC(A)10VBB2(V) 5IB2(mA)10ton(s)0.7typtstg(s)1.6typtf(s)1.1typIB1(mA) 10VBB1(V) 10Weight : Approx 6.0ga. Type No.b. Lot No.BEC(70)Equivalent circuitharman/kardonAVR 347/230, AVR 350/230 S
9、emiconductor PinoutsPage 2 of 51RadioFans.CN 收音机爱 好者资料库158Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)Application : Audio, Series Regulator and General PurposeSymbolVCBOVCEOVEBOICIBPCTjTstg2SD25601501505151130(Tc=25C)15055to+150UnitVVVAAWCCIAbsolute maximum ratings IEle
10、ctrical CharacteristicsSymbolICBOIEBOV(BR)CEOhFEVCE(sat)VBE(sat)fTCOB2SD2560100max100max150min5000min2.5max3.0max70typ120typUnitAAVVVMHzpFConditionsVCB=150VVEB=5VIC=30mAVCE=4V, IC=10AIC=10A, IB=10mA IC=10A, IB=10mAVCE=12V, IE=2AVCB=10V, f=1MHzDarlington2SD2560(Ta=25C)(Ta=25C)ICVCE Characteristics (T
11、ypical)Safe Operating Area (Single Pulse)0010515246Collector-Emitter Voltage VCE(V)Collector Current IC(A)50mAIB=0.3mA0.5mA0.8mA2mA1.0mA3mA10mA1.5mAVCE(sat)IB Characteristics (Typical)03210.210.510520010050Base Current IB(mA)Collector-Emitter Saturation Voltage VCE(sat)(V)IC=.15AIC=.10AIC=.5AICVBE T
12、emperature Characteristics (Typical)015510022.21Base-Emittor Voltage VBE(V)Collector Current IC(A)(VCE=4V)125C (Case Temp)25C (Case Temp)30C (Case Temp)hFEIC Characteristics (Typical)Collector Current IC(A)020.5110155500001000500010000500DC Current Gain hFE(VCE=4V)Typ020.5110155500001000500010000500
13、DC Current Gain hFE(VCE=4V)hFEIC Temperature Characteristics (Typical)Collector Current IC(A)125C30C25Cj-at Characteristics0.11.03.00.51101001000 2000Time t(ms)Transient Thermal Resistance j-a(C/W)fTIE Characteristics (Typical)(VCE=12V)Emitter Current IE(A)0.050.02010.51510040206080Cut-off Frequency
14、 fT(MHZ)PcTa Derating130100503.50Ambient Temperature Ta(C)Maximum Power Dissipation PC(W)With Infinite heatsinkWithout Heatsink0255075100125150External Dimensions MT-100(TO3P)15.60.49.619.90.34.02.05.00.21.83.20.1231.05+0.2-0.120.0min4.0maxBE5.450.15.450.1C4.80.20.65+0.2-0.11.42.00.1abWeight : Appro
15、x 6.0ga. Type No.b. Lot No.ITypical Switching Characteristics (Common Emitter)VCC(V)40RL() 4IC(A)10VBB2(V) 5IB2(mA)10ton(s)0.8typtstg(s)4.0typtf(s)1.2typIB1(mA) 10VBB1(V) 10BCE(70)Equivalent circuithFE RankO(5000to12000), P(6500to20000), Y(15000to30000)harman/kardonAVR 347/230, AVR 350/230 Semicondu
16、ctor PinoutsPage 3 of 511/8July 2001IHIGH SPEED: tPD = 5.0ns (TYP.) at VCC = 5VILOW POWER DISSIPATION:ICC = 2A(MAX.) at TA=25CICOMPATIBLE WITH TTL OUTPUTSVIH = 2V (MIN.), VIL = 0.8V (MAX.)I50 TRANSMISSION LINE DRIVING CAPABILITYISYMMETRICAL OUTPUT IMPEDANCE:|IOH| = IOL = 24mA (MIN)IBALANCED PROPAGAT
17、ION DELAYS:tPLH tPHL IOPERATING VOLTAGE RANGE:VCC (OPR) = 4.5V to 5.5VIPIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04IIMPROVED LATCH-UP IMMUNITYDESCRIPTIONThe 74ACT04 is an advanced high-speed CMOSHEX INVERTER fabricated with sub-micronsilicon gate and double-layer metal wiring C2MOStechnology. The i
18、nternal circuit is composed of 3 stagesincluding buffer output, which enables high noiseimmunity and stable output.The device is designed to interface directly HighSpeed CMOS systems with TTL, NMOS andCMOS output voltage levels.All inputs and outputs are equipped withprotection circuits against stat
19、ic discharge, givingthem 2KV ESD immunity and transient excessvoltage.74ACT04HEX INVERTER PIN CONNECTION AND IEC LOGIC SYMBOLSORDER CODES PACKAGETUBET & RDIP74ACT04BSOP74ACT04M74ACT04MTRTSSOP74ACT04TTRTSSOPDIPSOPharman/kardonAVR 347/230, AVR 350/230 Semiconductor PinoutsPage 4 of 51September 2004I5V
20、 TOLERANT INPUTSIHIGH SPEED:tPD = 5.2ns (MAX.) at VCC = 3VIPOWER DOWN PROTECTION ON INPUTS AND OUTPUTSISYMMETRICAL OUTPUT IMPEDANCE:|IOH| = IOL = 24mA (MIN) at VCC = 3VIPCI BUS LEVELS GUARANTEED AT 24 mAIBALANCED PROPAGATION DELAYS:tPLH tPHL IOPERATING VOLTAGE RANGE:VCC(OPR) = 2.0V to 3.6V (1.5V Dat
21、a Retention)IPIN AND FUNCTION COMPATIBLE WITH 74 SERIES 32ILATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17)IESD PERFORMANCE: HBM 2000V (MIL STD 883 method 3015); MM 200VDESCRIPTIONThe 74LCX32 is a low voltage CMOS QUAD2-INPUT OR GATE fabricated with sub-micronsilicon gate and double-layer metal wiring C
22、2MOStechnology. It is ideal for low power and highspeed 3.3V applications; it can be interfaced to 5Vsignal environment for inputs.It has same speed performance at 3.3V than 5VAC/ACT family, combined with a lower powerconsumption.All inputs and outputs are equipped withprotection circuits against st
23、atic discharge, givingthem 2KV ESD immunity and transient excessvoltage.74LCX32LOW VOLTAGE CMOS QUAD 2-INPUT OR GATEWITH 5V TOLERANT INPUTS Figure 1: Pin Connection And IEC Logic SymbolsTable 1: Order Codes PACKAGET & RSOP74LCX32MTRTSSOP74LCX32TTRTSSOPSOPRev. 6harman/kardonAVR 347/230, AVR 350/230 S
24、emiconductor PinoutsPage 5 of 511/11September 2001I5V TOLERANT INPUTSIHIGH SPEED :fMAX= 150 MHz (MAX.) at VCC= 3VIPOWER DOWN PROTECTION ON INPUTSAND OUTPUTSISYMMETRICAL OUTPUT IMPEDANCE:|IOH| = IOL= 24mA (MIN) at VCC= 3VIPCI BUS LEVELS GUARANTEED AT 24 mAIBALANCED PROPAGATION DELAYS:tPLHtPHLIOPERATI
25、NG VOLTAGE RANGE:VCC(OPR) = 2.0V to 3.6V (1.5V DataRetention)IPIN AND FUNCTION COMPATIBLE WITH74 SERIES 74ILATCH-UP PERFORMANCE EXCEEDS500mA (JESD 17)IESD PERFORMANCE:HBM 2000V (MIL STD 883 method 3015);MM 200VDESCRIPTIONThe 74LCX74 is a low voltage CMOS DUALD-TYPE FLIP FLOP WITH PRESET AND CLEARNON
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