Denon-AVR2313-avr-sm维修电路原理图.pdf
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1、D Note 1) Parameter Symbol Min Max Units Power Supplies Analog Digital |AVSS-DVSS| (Note 2) AVDD DVDD GND -0.3 -0.3 - 6.0 6.0 0.3 V V V Input Current (any pins except for supplies) IIN - 10mA Digital Input Voltage VIND -0.3 DVDD+0.3 V Ambient Operating Temperature Ta -40 85 C Storage Temperature Tst
2、g -65 150 C Note 1. 電圧対値。 Note 2. AVSSDVSS接続下。 注意: 値超条件使用場合、破壊。 通常動作保証。 推奨動作条件 (AVSS, DVSS=0V; Note 1) Parameter Symbol Min Typ Max Units Power Supplies (Note 3) Analog Digital AVDD DVDD 4.75 4.75 5.0 5.0 5.25 5.25 V V Voltage Reference VREF AVDD-0.5- AVDD V Note 3. AVDDDVDD立上考必要。 注意: 本記載条件以外使用関、当社責
3、任負十分 注意下。 185 H27U1G8F2BTR-BC (HDMI : U2603) H27U1G8F2BTR-BC Pin Function Rev 1.1 / Sep. 20095 1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash VCC VSS WP CLE ALE RE WE CEIO0IO7 R/B NC NC NC NCNC NCNC NC CLE ALEVss Vss Vss Vcc Vcc NC NC NC WP RE CE WERB NC NC NC NC NC NC NC NC NC NC NC NC NC I/
4、O0 I/O1 I/O9 I/O2 I/O3 I/O10 I/O11I/O4 I/O15 I/O12I/O14 I/O13 I/O6 I/O7 I/O5 NC NCNCNC NC PRE I/O8 NC NCNC NCNC A B C D E F G H J K L M 1 2 3 4 5 6 7 8 9 10 ? ? ? Figure 2 : 48-TSOP1 / 63-FBGA Contact, x8 Device IO7 - IO0Data Input / Outputs CLECommand latch enable ALEAddress latch enable CEChip Ena
5、ble RERead Enable WEWrite Enable WPWrite Protect R/BReady / Busy VccPower Supply VssGround NCNo Connection Figure 1 : Logic Diagram Table 1 : Signal Names ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Rev 1.1 / Sep. 20096 1 H27U1G
6、8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash 1.2 PIN DESCRIPTION Table 2 : Pin Description NOTE : 1. A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry
7、 the currents required during program and erase operations. Pin NameDescription IO0 IO7 DATA INPUTS/OUTPUTS The IO pins allow to input command, address and data and to output data during read / program operations. The inputs are latched on the rising edge of Write Enable (WE). The I/O buffer float t
8、o High-Z when the device is deselected or the outputs are disabled. CLE COMMAND LATCH ENABLE This input activates the latching of the IO inputs inside the Command Register on the Rising edge of Write Enable (WE). ALE ADDRESS LATCH ENABLE This input activates the latching of the IO inputs inside the
9、Address Register on the Rising edge of Write Enable (WE). CE CHIP ENABLE This input controls the selection of the device. WE WRITE ENABLE This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise edge of WE. RE READ ENABLE The RE input is the serial data-out
10、control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. WP WRITE PROTECT The WP pin, when Low, provides an Hardware protection against undesired modify (program / erase) operations. R
11、/B READY BUSY The Ready/Busy output is an Open Drain pin that signals the state of the memory. Vcc SUPPLY VOLTAGE The Vcc supplies the power for all the operations (Read, Write, Erase). VssGROUND NCNO CONNECTION 186 H27U1G8F2BTR-BC Block Diagram Rev 1.1 / Sep. 200915 1 H27U1G8F2B Series 1 Gbit (128
12、M x 8 bit) NAND Flash Figure 4 : Block Diagram ADDRESS REGISTER/ COUNTER PROGRAM ERASE CONTROLLER HV GENERATION COMMAND INTERFACE LOGIC COMMAND REGISTER DATA REGISTER IO RE BUFFERS Y DECODER PAGE BUFFER X D E C O D E R 1024 Mbit + 32 Mbit NAND Flash MEMORY ARRAY WP CE WE CLE ALE A27 A0 187 A3V56S30F
13、TP-G6 (HDMI:U2604,2605) A3V56S30FTP A3V56S40FTP 256M Single Data Rate Synchronous DRAM Revision 1.1 Mar., 2010Page 2 / 39 CLK : Master Clock DQM : Output Disable / Write Mask (A3V56S30FTP) CKE : Clock Enable DQMU,L : Output Disable / Write Mask (A3V56S40FTP) /CS : Chip Select A0-12 : Address Input /
14、RAS : Row Address Strobe BA0,1 : Bank Address /CAS : Column Address Strobe Vdd : Power Supply /WE : Write Enable VddQ : Power Supply for Output DQ0-7 : Data I/O (A3V56S30FTP) Vss : Ground DQ0-15 : Data I/O (A3V56S40FTP) VssQ : Ground for Output BA0 BA1 Vdd DQ0 VddQ DQ1 DQ2 VssQ DQ3 DQ4 VddQ DQ5 DQ6
15、VssQ DQ7 Vdd DQML /WE /CAS /RAS /CS A10(AP) A2 A3 Vdd A0 A1 Vdd DQ0 VddQ NC DQ1 VssQ NC DQ2 VddQ NC DQ3 VssQ NC Vdd NC /WE /CAS /RAS /CS BA0 BA1 A10(AP) A2 A3 Vdd A0 A1 DQM CKE Vss DQ15 VssQ DQ14 DQ13 VddQ DQ12 DQ11 VssQ DQ10 DQ9 VddQ DQ8 Vss NC DQMU CLK CKE A12 A11 A8 A7 A6 A5 A4 Vss A9 Vss DQ7 Vss
16、Q NC DQ6 VddQ NC DQ5 VssQ NC DQ4 VddQ NC Vss NC CLK A12 A11 A8 A7 A6 A5 A4 Vss A9 PIN CONFIGURATION (TOP VIEW) PIN CONFIGURATION (TOP VIEW) x8 x16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 2332 2431 2530 2629 2728 Vdd D
17、Q0 VddQ NC DQ1 VssQ NC DQ2 VddQ NC DQ3 VssQ NC Vdd NC /WE /CAS /RAS /CS BA0 BA1 A10(AP) A0 A1 A2 A3 Vdd Vss DQ7 VssQ NC DQ6 VddQ NC DQ5 VssQ NC DQ4 VddQ NC Vss NC DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 Vss 188 A3V56S30FTP-G6 Pin Function A3V56S30FTP A3V56S40FTP 256M Single Data Rate Synchronous DRAM
18、Revision 1.1 Mar., 2010Page 4 / 39 Pin Descriptions SYMBOLTYPEDESCRIPTION CLKInput Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. CKEInput Clock Enable: CKE a
19、ctivates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), ACTIVE POWER-DOWN (row active in any bank), or CLOCK SUSPEND operation (burst / access in progress). CKE is synchronous except after the device ente
20、rs self refresh mode, where CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK, are disabled during self refresh mode, providing low standby power. CKE may be tied HIGH. /CSInput Chip Select: /CS enables (registered LOW) and disables (registered HIGH) the co
21、mmand decoder. All commands are masked when /CS is registered HIGH. /CS provides for external bank selection on systems with multiple banks. /CS is considered part of the command code. /CAS, /RAS, /WE Input Command Inputs: /CAS, /RAS, and /WE (along with /CS) define the command being entered. DQM, D
22、QML, DQMU, Input Input / Output Mask: DQM is sampled HIGH and is an input mask signal for write accesses and an output disable signal for read accesses. Input data is masked during a WRITE cycle. The output buffers are placed in a High-Z state (two-clock latency) when during a READ cycle. DQM corres
23、ponds to DQ0DQ7 (A3V56S30FTP). DQML corresponds to DQ0DQ7, DQMU corresponds to DQ8DQ15 (A3V56S40FTP). BA0, BA1Input Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. A0A12Input A0-12 specify the Row / Column Address in conjunction
24、with BA0,1. The Row Address is specified by A0-12. The Column Address is specified by A0-9(x8) and A0-8(x16). A10 is also used to indicate precharge option. When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged.
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